NTE172A silicon npn transistor darlington preamp, medium speed switch description: the NTE172A is a silicon npn darlington transistor in a to92 type case designed for preamplifier input stages requiring input impedances of several megohms or extremely low level, high gain, low noise amplifier applications. absolute maximum ratings: (t a = +25 c unless otherwise specified) collector?base voltage, v cbo 40v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector?emitter voltage, v ceo 40v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter?base voltage, v ebo 12v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector current, i c continuous 300ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulsed (note 1) 500ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . base current, i b 50ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total power dissipation (t a = +25 c), p d 400mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate above 25 c 4mw/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ?65 to +125 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?65 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature (during soldering, 1/16? 1/32? from case for 10sec max.), t l +260 c . . . . . . . . note 1. pulse test: pulse width 300 s, duty cycle 2% electrical characteristics: (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit static characteristics collector?base breakdown voltage v (br)cbo i c = 0.1 a, i e = 0 40 ? ? v collector?emitter breakdown voltage v (br)ceo i c = 10ma, i b = 0 40 ? ? v emitter?base breakdown voltage v (br)ebo i e = 0.1 a, i e = 0 12 ? ? v dc current gain h fe v ce = 5v, i c = 2ma 7000 ? 70000 v ce = 5v, i c = 100ma 20000 ? ? collector cutoff current i cbo v cb = 40v, i e = 0 ? ? 100 na v cb = 40v, i e = 0, t a = +100 c ? ? 20 a
electrical characteristics (cont?d): (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit static characteristics (cont?d) emitter cutoff current i ebo v eb = 12v, i c = 0 ? ? 100 na collector ? emitter saturation voltage v ce(sat) i c = 200ma, i b = 0.2ma ? ? 1.4 v base ? emitter saturation voltage v be(sat) i c = 200ma, i b = 0.2ma ? ? 1.6 v base ? emitter voltage v be v ce = 5v, i c = 200ma ? ? 1.5 v dynamic characteristics small ? signal current gain h fe v ce = 5v, i c = 2ma, f = 1khz 7000 ? ? current gain ? high frequency |h fe | v ce = 5v, i c = 2ma, f = 1khz 15.6 ? ? db current gain ? bandwidth product f t v ce = 5v, i c = 2ma, f = 10mhz 60 ? ? mhz input impedance h ie v ce = 5v, i c = 2ma, f = 1khz ? 650 ? k ? collector ? base capacitance c cb v cb = 10v, f = 1mhz ? 7.6 10.0 pf emitter capacitance c eb v eb = 0.5v, f = 1mhz ? 10.5 ? pf noise voltage e n i c = 0.6ma, v ce = 5v, r g = 160k ? , f = 10hz to 10khz, b.w. = 15.7khz ? 195 230 nv/ hz b c e .021 (.445) dia max e c b seating plane .135 (3.45) min .100 (2.54) .050 (1.27) .105 (2.67) max .105 (2.67) max .205 (5.2) max .210 (5.33) max .500 (12.7) min .165 (4.2) max
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